SK Hynix Unveils UFS 4.1 with 321-Layer NAND for AI-Driven Smartphones
Key Features & Innovation – World’s first 321-layer 1Tb TLC 4D NAND – Built on UFS 4.1 standard – Optimized for on-device AI, delivering high performance with low power usage – Successor to 238-layer NAND with 7% better power efficiency – Thinner form factor: Reduced to 0.85mm (from 1mm)
Performance Boosts – Sequential read speed: 4,300 MB/s (fastest among Gen 4 UFS) – Random read/write speed improvements: – Read: +15% – Write: +40% – Designed to enhance multitasking, app performance, and AI responsiveness
Availability & Market Outlook – Capacities: 512GB and 1TB – Customer qualification expected within 2025 – Volume shipments projected for Q1 2026 – Aims to solidify SK Hynix’s position in flagship smartphone segment