SK Hynix Unveils UFS 4.1 with 321-Layer NAND for AI-Driven Smartphones

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Key Features & Innovation – World’s first 321-layer 1Tb TLC 4D NAND – Built on UFS 4.1 standard Optimized for on-device AI, delivering high performance with low power usage – Successor to 238-layer NAND with 7% better power efficiency Thinner form factor: Reduced to 0.85mm (from 1mm)

Performance Boosts Sequential read speed: 4,300 MB/s (fastest among Gen 4 UFS) Random read/write speed improvements: – Read: +15% – Write: +40% – Designed to enhance multitasking, app performance, and AI responsiveness

Availability & Market Outlook – Capacities: 512GB and 1TB Customer qualification expected within 2025 Volume shipments projected for Q1 2026 – Aims to solidify SK Hynix’s position in flagship smartphone segment